Introduction to Space Charge Effects in Semiconductors


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In addition to the usual factors considered such as the spreading of space charge during illumination etc. A convenient set of approximate equations are chosen, from the usual relations, to describe the dependence of the photo e. It is shown that under appropriate simplifying assumptions the expressions obtained reduce to those formerly described. Volume 16 , Issue 2. The full text of this article hosted at iucr.

US3249764A - Forward biased negative resistance semiconductor devices - Google Patents

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